| PART |
Description |
Maker |
| NESG2101M16-A NESG2101M16-T3 NESG2101M16-T3-A NESG |
L BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR
NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
|
NEC
|
| BFP650 |
Digital Transistors - NPN SiGe RF Transistor, high power amplifiers, low noise RF transistor in SOT343 Package, 4V, 150mA
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
|
| NESG220033 NESG220033-T1B |
NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)
|
Renesas Electronics Corporation
|
| NESG210719-T1-A |
NPN SiGe RF Transistor for Low Noise, High-Gain
|
Renesas Electronics Corporation
|
| NESG2046M33-T3-A NESG2046M33 NESG2046M33-A |
NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION
|
CEL[California Eastern Labs]
|
| NESG204619 NESG204619-T1-A NESG204619-A |
NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION
|
NEC[NEC]
|
| BFP740 |
Ultra Low Noise SiGe:C Heterojunction Bipolar Transistors (HBTs) in SOT343 and TSFP-4 Package
NPN Silicon Germanium RF Transistor
|
INFINEON[Infineon Technologies AG]
|
| NESG2031M05-T1-A NESG2031M05-A |
NPN SiGe RF Transistor for Low Noise, High-Gain Amplification
|
Renesas Electronics Corporation
|
| THN6601B |
NPN SiGe RF TRANSISTOR
|
TACHYONICS[Tachyonics CO,. LTD]
|
| THN6701B |
SiGe NPN Transistor
|
AUK corp
|
| THN420Z |
SiGe NPN Transistor
|
AUK corp
|
| THN5601B |
SiGe NPN Transistor
|
AUK corp
|
